Memory
HY57V161610BLTC-12
SK Hynix Inc
Description: Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50

Overview of HY57V161610BLTC-12 by SK Hynix Inc

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Part Data Attributes for HY57V161610BLTC-12 by SK Hynix Inc

HY57V161610BLTC-12
SK Hynix Inc
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SK HYNIX INC
Part Package Code
TSOP2
Package Description
TSOP2,
Pin Count
50
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
DUAL BANK PAGE BURST
Access Time-Max
8.5 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PDSO-G50
JESD-609 Code
e6
Length
20.95 mm
Memory Density
16777216 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
50
Number of Words
1048576 words
Number of Words Code
1000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
1MX16
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN BISMUTH
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Width
10.16 mm
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  1. HY57V161610BLTC-12
    SK Hynix Inc
    Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
    VS

Alternate Parts for HY57V161610BLTC-12

This table gives cross-reference parts and alternative options found for HY57V161610BLTC-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V161610BLTC-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MB811171622A-84FN Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Limited HY57V161610BLTC-12 vs MB811171622A-84FN
AS4LC1M16S0-12TC Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Alliance Semiconductor Corporation HY57V161610BLTC-12 vs AS4LC1M16S0-12TC
TC59S1616AFT-10 IC 1M X 16 SYNCHRONOUS DRAM, 8.5 ns, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50, Dynamic RAM Toshiba America Electronic Components HY57V161610BLTC-12 vs TC59S1616AFT-10
MB811171622A-100FN Synchronous DRAM, 1MX16, 54ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Semiconductor Limited HY57V161610BLTC-12 vs MB811171622A-100FN
MB811171622E-84FN Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Limited HY57V161610BLTC-12 vs MB811171622E-84FN
HY57V161610BTC-12 Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HY57V161610BLTC-12 vs HY57V161610BTC-12
Part Number Description Manufacturer Compare
IS42S16100B-6T Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Integrated Silicon Solution Inc HY57V161610BLTC-12 vs IS42S16100B-6T
VG3617161ET-8 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation HY57V161610BLTC-12 vs VG3617161ET-8
M52D16161A-10TIG Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 Elite Semiconductor Memory Technology Inc HY57V161610BLTC-12 vs M52D16161A-10TIG
IS42S16100E-7B Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, BGA-60 Integrated Silicon Solution Inc HY57V161610BLTC-12 vs IS42S16100E-7B
HY57V161610DLTC-10S Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HY57V161610BLTC-12 vs HY57V161610DLTC-10S
K4S161622D-TI10 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50 Samsung Semiconductor HY57V161610BLTC-12 vs K4S161622D-TI10
UPD4516161AG5-A80-9NF Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Elpida Memory Inc HY57V161610BLTC-12 vs UPD4516161AG5-A80-9NF
K4S161622D-TL70 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor HY57V161610BLTC-12 vs K4S161622D-TL70
VG3616161DT-8H Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation HY57V161610BLTC-12 vs VG3616161DT-8H
V54C316162VCT-6 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Mosel Vitelic Corporation HY57V161610BLTC-12 vs V54C316162VCT-6

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