Part Details for HUF75617D3S by Rochester Electronics LLC
Overview of HUF75617D3S by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HUF75617D3S
HUF75617D3S CAD Models
HUF75617D3S Part Data Attributes
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HUF75617D3S
Rochester Electronics LLC
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Datasheet
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HUF75617D3S
Rochester Electronics LLC
16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Reach Compliance Code | unknown | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | NOT APPLICABLE | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for HUF75617D3S
This table gives cross-reference parts and alternative options found for HUF75617D3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75617D3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HUF75617D3ST | Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | HUF75617D3S vs HUF75617D3ST |
| HUF75617D3S_NL | Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | HUF75617D3S vs HUF75617D3S_NL |
| HUF75617D3S | 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | HUF75617D3S vs HUF75617D3S |
| FDD3682 | N-Channel PowerTrench® MOSFET, 100V, 32A, 0.036 ohm, 2500-REEL | onsemi | HUF75617D3S vs FDD3682 |
| HUF75617D3ST | 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | HUF75617D3S vs HUF75617D3ST |
| FDD3682 | N-Channel PowerTrench® MOSFET, 100V, 32A, 0.036 ohm, TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB, 2500/TAPE REEL | Fairchild Semiconductor Corporation | HUF75617D3S vs FDD3682 |