Part Details for HUF75321S3ST by Intersil Corporation
Overview of HUF75321S3ST by Intersil Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HUF75321S3ST
HUF75321S3ST CAD Models
HUF75321S3ST Part Data Attributes
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HUF75321S3ST
Intersil Corporation
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Datasheet
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HUF75321S3ST
Intersil Corporation
35A, 55V, 0.034ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERSIL CORP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.034 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 70 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for HUF75321S3ST
This table gives cross-reference parts and alternative options found for HUF75321S3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75321S3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HUF75321S3S | Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Fairchild Semiconductor Corporation | HUF75321S3ST vs HUF75321S3S |
HUF75321S3S | Power Field-Effect Transistor, 0.032ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-4 | Harris Semiconductor | HUF75321S3ST vs HUF75321S3S |
HUF75321S3S_NL | Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Fairchild Semiconductor Corporation | HUF75321S3ST vs HUF75321S3S_NL |
HUF75321S3S | 35A, 55V, 0.034ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Rochester Electronics LLC | HUF75321S3ST vs HUF75321S3S |
HUF75321S3ST | Power Field-Effect Transistor, 0.032ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-4 | Harris Semiconductor | HUF75321S3ST vs HUF75321S3ST |