Part Details for HT17GHB0G by Taiwan Semiconductor
Overview of HT17GHB0G by Taiwan Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HT17GHB0G
HT17GHB0G CAD Models
HT17GHB0G Part Data Attributes:
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HT17GHB0G
Taiwan Semiconductor
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Datasheet
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HT17GHB0G
Taiwan Semiconductor
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
JESD-30 Code | O-PALF-W2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Output Current-Max | 1 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Peak Reflow Temperature (Cel) | 260 | |
Reference Standard | AEC-Q101 | |
Rep Pk Reverse Voltage-Max | 800 V | |
Reverse Recovery Time-Max | 0.075 µs | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | WIRE | |
Terminal Position | AXIAL | |
Time@Peak Reflow Temperature-Max (s) | 10 |
Alternate Parts for HT17GHB0G
This table gives cross-reference parts and alternative options found for HT17GHB0G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HT17GHB0G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RL107H-T | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, PLASTIC, A-405, 2 PIN | Rectron Semiconductor | HT17GHB0G vs RL107H-T |
SPD4947SMSS | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | Solid State Devices Inc (SSDI) | HT17GHB0G vs SPD4947SMSS |
1N4006SGA1G | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon | Taiwan Semiconductor | HT17GHB0G vs 1N4006SGA1G |
10E8TR | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41 | Nihon Inter Electronics Corporation | HT17GHB0G vs 10E8TR |
1N4006SGP0G | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon | Taiwan Semiconductor | HT17GHB0G vs 1N4006SGP0G |
RL106F-E | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon | Rectron Semiconductor | HT17GHB0G vs RL106F-E |
SS5621US | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-1, 2 PIN | Sensitron Semiconductors | HT17GHB0G vs SS5621US |
1N5620 | Rectifier Diode, Avalanche, 1 Element, 1A, 800V V(RRM), Silicon, HERMETICALLY SEALED, GLASS PACKAGE-2 | Gulfsemi | HT17GHB0G vs 1N5620 |
1T6GB0G | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, | Taiwan Semiconductor | HT17GHB0G vs 1T6GB0G |
1A6-TP-HF | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, | Micro Commercial Components | HT17GHB0G vs 1A6-TP-HF |