Part Details for HM66AEB36104BP-30 by Renesas Electronics Corporation
Overview of HM66AEB36104BP-30 by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HM66AEB36104BP-30
HM66AEB36104BP-30 CAD Models
HM66AEB36104BP-30 Part Data Attributes
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HM66AEB36104BP-30
Renesas Electronics Corporation
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Datasheet
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HM66AEB36104BP-30
Renesas Electronics Corporation
1MX36 DDR SRAM, 0.45ns, PBGA165, PLASTIC, FBGA-165
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS TECHNOLOGY CORP | |
| Part Package Code | BGA | |
| Package Description | LBGA, BGA165,11X15,40 | |
| Pin Count | 165 | |
| Reach Compliance Code | unknown | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PBGA-B165 | |
| Length | 17 mm | |
| Memory Density | 37748736 bit | |
| Memory IC Type | DDR SRAM | |
| Memory Width | 36 | |
| Moisture Sensitivity Level | 1 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX36 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.46 mm | |
| Standby Current-Max | 0.35 A | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 0.88 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Width | 15 mm |
Alternate Parts for HM66AEB36104BP-30
This table gives cross-reference parts and alternative options found for HM66AEB36104BP-30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HM66AEB36104BP-30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CY7C1372AV25-100BGC | ZBT SRAM, 1MX18, 5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119 | Cypress Semiconductor | HM66AEB36104BP-30 vs CY7C1372AV25-100BGC |
| K7B401825A-TC65 | Cache SRAM, 256KX18, 6.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | Samsung Semiconductor | HM66AEB36104BP-30 vs K7B401825A-TC65 |
| MT58V2MV18FF-7.5 | Standard SRAM, 2MX18, 7.5ns, CMOS, PBGA165, 13 X 15 MM, MO-216, FBGA-165 | Micron Technology Inc | HM66AEB36104BP-30 vs MT58V2MV18FF-7.5 |
| UPD44164364F5-E30-EQ1 | DDR SRAM, 512KX36, 0.27ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165 | NEC Electronics Group | HM66AEB36104BP-30 vs UPD44164364F5-E30-EQ1 |
| MCM69R819ZP6 | 256KX18 CACHE SRAM, 3ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | Motorola Mobility LLC | HM66AEB36104BP-30 vs MCM69R819ZP6 |
| CY7C1305BV18-133BZC | QDR SRAM, 1MX18, 3ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, 1 MM PITCH, FBGA-165 | Cypress Semiconductor | HM66AEB36104BP-30 vs CY7C1305BV18-133BZC |
| CY7C1381AV25-117AC | Standard SRAM, 512KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Cypress Semiconductor | HM66AEB36104BP-30 vs CY7C1381AV25-117AC |
| UPD44322182F1-A44Y-FQ2 | Cache SRAM, 2MX18, 2.8ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165 | NEC Electronics Group | HM66AEB36104BP-30 vs UPD44322182F1-A44Y-FQ2 |
| KM718V787T-10 | Cache SRAM, 128KX18, 10ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | Samsung Semiconductor | HM66AEB36104BP-30 vs KM718V787T-10 |
| 71V3578YS150BGGI | Cache SRAM, 256KX18, 3.8ns, CMOS, PBGA119, ROHS COMPLIANT, BGA-119 | Integrated Device Technology Inc | HM66AEB36104BP-30 vs 71V3578YS150BGGI |