Part Details for HM5425161BTT-10 by Hitachi Ltd
Overview of HM5425161BTT-10 by Hitachi Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HM5425161BTT-10
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 91 |
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RFQ |
Part Details for HM5425161BTT-10
HM5425161BTT-10 CAD Models
HM5425161BTT-10 Part Data Attributes
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HM5425161BTT-10
Hitachi Ltd
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Datasheet
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HM5425161BTT-10
Hitachi Ltd
DDR DRAM, 16MX16, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HITACHI LTD | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Clock Frequency-Max (fCLK) | 125 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Sequential Burst Length | 2,4,8 | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for HM5425161BTT-10
This table gives cross-reference parts and alternative options found for HM5425161BTT-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HM5425161BTT-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| V58C2256164SXT8 | DDR DRAM, 16MX16, 0.8ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, TSOP2-66 | Mosel Vitelic Corporation | HM5425161BTT-10 vs V58C2256164SXT8 |
| K4H561638D-TCA00 | DDR DRAM, 16MX16, 0.8ns, CMOS, PDSO66, 0.400 X 0.875, 0.65 MM PITCH, MS-024FC, TSOP2-66 | Samsung Semiconductor | HM5425161BTT-10 vs K4H561638D-TCA00 |
| HYB25D256160BE-8 | DDR DRAM, 16MX16, 0.8ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Infineon Technologies AG | HM5425161BTT-10 vs HYB25D256160BE-8 |
| HYB25D256160CE-8 | DDR DRAM, 16MX16, 0.8ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Infineon Technologies AG | HM5425161BTT-10 vs HYB25D256160CE-8 |
| K4H561638D-TLA00 | DDR DRAM, 16MX16, 0.8ns, CMOS, PDSO66, 0.400 X 0.875, 0.65 MM PITCH, MS-024FC, TSOP2-66 | Samsung Semiconductor | HM5425161BTT-10 vs K4H561638D-TLA00 |
| V58C2256164SBT8 | DDR DRAM, 16MX16, 0.8ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, TSOP2-66 | Mosel Vitelic Corporation | HM5425161BTT-10 vs V58C2256164SBT8 |
| HYB25D256160CEL-8 | DDR DRAM, 16MX16, 0.8ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Infineon Technologies AG | HM5425161BTT-10 vs HYB25D256160CEL-8 |