Datasheets
HGTP2N120BND by:

12A, 1200V, N-CHANNEL IGBT, TO-220AB

Part Details for HGTP2N120BND by Intersil Corporation

Overview of HGTP2N120BND by Intersil Corporation

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Part Details for HGTP2N120BND

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HGTP2N120BND Part Data Attributes

HGTP2N120BND Intersil Corporation
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HGTP2N120BND Intersil Corporation 12A, 1200V, N-CHANNEL IGBT, TO-220AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 12 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 130 ns
Gate-Emitter Thr Voltage-Max 6.8 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Qualification Status Not Qualified
Rise Time-Max (tr) 15 ns
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 285 ns
Turn-on Time-Nom (ton) 32 ns

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