HGTP10N50F1D
Description: HGTP10N50F1D

Overview of HGTP10N50F1D by Intersil Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

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Part Data Attributes for HGTP10N50F1D by Intersil Corporation

HGTP10N50F1D
Intersil Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTERSIL CORP
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Collector Current-Max (IC)
12 A
Collector-Emitter Voltage-Max
500 V
Gate-Emitter Thr Voltage-Max
4.5 V
Gate-Emitter Voltage-Max
20 V
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
75 W
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
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Alternate Parts for HGTP10N50F1D

This table gives cross-reference parts and alternative options found for HGTP10N50F1D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTP10N50F1D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HGTP10N50F1D Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor HGTP10N50F1D vs HGTP10N50F1D
Part Number Description Manufacturer Compare
HGTP10N50F1D Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor HGTP10N50F1D vs HGTP10N50F1D

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