Datasheets
HGTG20N60B3 by:

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247

Part Details for HGTG20N60B3 by Harris Semiconductor

Overview of HGTG20N60B3 by Harris Semiconductor

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Price & Stock for HGTG20N60B3

Part # Distributor Description Stock Price Buy
Quest Components INSULATED GATE BIPOLAR TRANSISTOR, 40A I(C), 600V V(BR)CES, N-CHANNEL, TO-247 354
  • 1 $6.7500
  • 60 $2.9250
  • 172 $2.7000
$2.7000 / $6.7500 Buy Now
Rochester Electronics HGTG20N60 - N-Channel Insulated Gate Bipolar Transistor RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 732
  • 1 $3.6200
  • 25 $3.5500
  • 100 $3.4000
  • 500 $3.2600
  • 1,000 $3.0800
$3.0800 / $3.6200 Buy Now

Part Details for HGTG20N60B3

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HGTG20N60B3 Part Data Attributes

HGTG20N60B3 Harris Semiconductor
Buy Now Datasheet
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HGTG20N60B3 Harris Semiconductor Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Case Connection COLLECTOR
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 200 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 165 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 220 ns
Turn-on Time-Nom (ton) 25 ns

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