Datasheets
HGTG18N120BN by:

54A, 1200V, N-CHANNEL IGBT, TO-247

Part Details for HGTG18N120BN by Intersil Corporation

Overview of HGTG18N120BN by Intersil Corporation

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Part Details for HGTG18N120BN

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HGTG18N120BN Part Data Attributes

HGTG18N120BN Intersil Corporation
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HGTG18N120BN Intersil Corporation 54A, 1200V, N-CHANNEL IGBT, TO-247
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Collector Current-Max (IC) 54 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 390 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 345 ns
Turn-on Time-Nom (ton) 38 ns

Alternate Parts for HGTG18N120BN

This table gives cross-reference parts and alternative options found for HGTG18N120BN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG18N120BN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTG18N120BN Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247, Fairchild Semiconductor Corporation HGTG18N120BN vs HGTG18N120BN
Part Number Description Manufacturer Compare
HGTG7N60A4 34A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTG18N120BN vs HGTG7N60A4
SGB15N60 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-263AB Siemens HGTG18N120BN vs SGB15N60
SGB04N60 Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-263AB Siemens HGTG18N120BN vs SGB04N60
HGTG30N60B3 600V, N-CHANNEL IGBT, TO-247, PLASTIC PACKAGE-3 Intersil Corporation HGTG18N120BN vs HGTG30N60B3
HGTP7N60A4 34A, 600V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGTG18N120BN vs HGTP7N60A4
SGP30N60 Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-220AB Siemens HGTG18N120BN vs SGP30N60
HGTG30N60B3D Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HGTG18N120BN vs HGTG30N60B3D
HGTG30N60B3D 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTG18N120BN vs HGTG30N60B3D
IRG4PC50KPBF Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGTG18N120BN vs IRG4PC50KPBF
IRG4BC30KPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTG18N120BN vs IRG4BC30KPBF

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