Datasheets
HGT1S7N60C3DS9A by:

14A, 600V, N-CHANNEL IGBT, TO-263AB

Part Details for HGT1S7N60C3DS9A by Intersil Corporation

Overview of HGT1S7N60C3DS9A by Intersil Corporation

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for HGT1S7N60C3DS9A

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HGT1S7N60C3DS9A Part Data Attributes:

HGT1S7N60C3DS9A Intersil Corporation
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HGT1S7N60C3DS9A Intersil Corporation 14A, 600V, N-CHANNEL IGBT, TO-263AB
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 14 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 490 ns
Turn-on Time-Nom (ton) 20 ns

Alternate Parts for HGT1S7N60C3DS9A

This table gives cross-reference parts and alternative options found for HGT1S7N60C3DS9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S7N60C3DS9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGT1S7N60C3DS 14A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S7N60C3DS9A vs HGT1S7N60C3DS
HGT1S7N60C3DS9A Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3PIN Fairchild Semiconductor Corporation HGT1S7N60C3DS9A vs HGT1S7N60C3DS9A
Part Number Description Manufacturer Compare
FGH50N6S2D Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, Fairchild Semiconductor Corporation HGT1S7N60C3DS9A vs FGH50N6S2D
IRG4PH20KDPBF Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGT1S7N60C3DS9A vs IRG4PH20KDPBF
HGT1S20N60C3RS 40A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S7N60C3DS9A vs HGT1S20N60C3RS
MGY25N120D 38A, 1200V, N-CHANNEL IGBT, TO-264AA, TO-264, 3 PIN Motorola Mobility LLC HGT1S7N60C3DS9A vs MGY25N120D
MGW12N120D 20A, 1200V, N-CHANNEL IGBT, TO-247AE Motorola Mobility LLC HGT1S7N60C3DS9A vs MGW12N120D
HGTG12N60C3DR 24A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGT1S7N60C3DS9A vs HGTG12N60C3DR
HGTP2N120CN 2A, 1200V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGT1S7N60C3DS9A vs HGTP2N120CN
IRG4BC20FDPBF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier HGT1S7N60C3DS9A vs IRG4BC20FDPBF
IRG4BC20W-SPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier HGT1S7N60C3DS9A vs IRG4BC20W-SPBF
SGP15N60 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB Siemens HGT1S7N60C3DS9A vs SGP15N60

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