Part Details for HGT1S5N120BNDS9A by Fairchild Semiconductor Corporation
Overview of HGT1S5N120BNDS9A by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for HGT1S5N120BNDS9A
HGT1S5N120BNDS9A CAD Models
HGT1S5N120BNDS9A Part Data Attributes
|
|
HGT1S5N120BNDS9A
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
HGT1S5N120BNDS9A
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-263AB,
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 21 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 200 ns | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 167 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 20 ns | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 357 ns | |
| Turn-on Time-Nom (ton) | 35 ns |
Alternate Parts for HGT1S5N120BNDS9A
This table gives cross-reference parts and alternative options found for HGT1S5N120BNDS9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S5N120BNDS9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGT1S5N120BNDS | Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | HGT1S5N120BNDS9A vs HGT1S5N120BNDS |
| HGT1S5N120BNDS | 21A, 1200V, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | HGT1S5N120BNDS9A vs HGT1S5N120BNDS |