Part Details for HGT1S3N60A4S by Fairchild Semiconductor Corporation
Overview of HGT1S3N60A4S by Fairchild Semiconductor Corporation
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Part Details for HGT1S3N60A4S
HGT1S3N60A4S CAD Models
HGT1S3N60A4S Part Data Attributes
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HGT1S3N60A4S
Fairchild Semiconductor Corporation
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Datasheet
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HGT1S3N60A4S
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS, AVALANCHE RATED | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 17 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 100 ns | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 15 ns | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 180 ns | |
| Turn-on Time-Nom (ton) | 17.5 ns |