HGT1S2N120CN9A
Fairchild Semiconductor Corporation
Description: Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel

Overview of HGT1S2N120CN9A by Fairchild Semiconductor Corporation

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Automotive

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Part Data Attributes for HGT1S2N120CN9A by Fairchild Semiconductor Corporation

HGT1S2N120CN9A
Fairchild Semiconductor Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Package Description
,
Reach Compliance Code
unknown
ECCN Code
EAR99
Collector Current-Max (IC)
13 A
Collector-Emitter Voltage-Max
1200 V
Fall Time-Max (tf)
320 ns
Gate-Emitter Voltage-Max
20 V
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
104 W
Rise Time-Max (tr)
15 ns
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
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  1. HGT1S2N120CN9A
    Fairchild Semiconductor Corporation
    Insulated Gate Bipolar Transistor, 13A I(C), 1200V V(BR)CES, N-Channel
    VS

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