Part Details for HGT1S20N60C3S by onsemi
Overview of HGT1S20N60C3S by onsemi
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for HGT1S20N60C3S
HGT1S20N60C3S CAD Models
HGT1S20N60C3S Part Data Attributes
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HGT1S20N60C3S
onsemi
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Datasheet
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HGT1S20N60C3S
onsemi
Insulated Gate Bipolar Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 45 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 210 ns | |
| Gate-Emitter Thr Voltage-Max | 6.3 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 164 W | |
| Rise Time-Max (tr) | 28 ns | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 660 ns | |
| Turn-off Time-Nom (toff) | 388 ns | |
| Turn-on Time-Max (ton) | 60 ns | |
| Turn-on Time-Nom (ton) | 52 ns | |
| VCEsat-Max | 1.8 V |