Datasheets
HGT1S20N60C3S by:

45A, 600V, N-CHANNEL IGBT, TO-263AB

Part Details for HGT1S20N60C3S by Intersil Corporation

Overview of HGT1S20N60C3S by Intersil Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for HGT1S20N60C3S

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HGT1S20N60C3S Part Data Attributes

HGT1S20N60C3S Intersil Corporation
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HGT1S20N60C3S Intersil Corporation 45A, 600V, N-CHANNEL IGBT, TO-263AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 45 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 210 ns
Gate-Emitter Thr Voltage-Max 6.3 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 164 W
Qualification Status Not Qualified
Rise Time-Max (tr) 28 ns
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 388 ns
Turn-on Time-Nom (ton) 52 ns

Alternate Parts for HGT1S20N60C3S

This table gives cross-reference parts and alternative options found for HGT1S20N60C3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S20N60C3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGT1S12N60B3DS 27A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S20N60C3S vs HGT1S12N60B3DS
HGTG30N120CN 30A, 1200V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGT1S20N60C3S vs HGTG30N120CN
HGTG27N120BN Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HGT1S20N60C3S vs HGTG27N120BN
IRG4IBC30KDPBF Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PAK-3 International Rectifier HGT1S20N60C3S vs IRG4IBC30KDPBF
SGP04N60 Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB Siemens HGT1S20N60C3S vs SGP04N60
SKW30N60FKSA1 Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG HGT1S20N60C3S vs SKW30N60FKSA1
IRG4PH30KPBF Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier HGT1S20N60C3S vs IRG4PH30KPBF
IRG4PF50WDPBF Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGT1S20N60C3S vs IRG4PF50WDPBF
IRG4PSC71KPBF Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, SUPER-247, 3 PIN International Rectifier HGT1S20N60C3S vs IRG4PSC71KPBF
GT80J101 TRANSISTOR 80 A, 600 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components HGT1S20N60C3S vs GT80J101

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