Part Details for HGT1S20N60C3S by Intersil Corporation
Overview of HGT1S20N60C3S by Intersil Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for HGT1S20N60C3S
HGT1S20N60C3S CAD Models
HGT1S20N60C3S Part Data Attributes
|
HGT1S20N60C3S
Intersil Corporation
Buy Now
Datasheet
|
Compare Parts:
HGT1S20N60C3S
Intersil Corporation
45A, 600V, N-CHANNEL IGBT, TO-263AB
|
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERSIL CORP | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 45 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 210 ns | |
Gate-Emitter Thr Voltage-Max | 6.3 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 164 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 28 ns | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 388 ns | |
Turn-on Time-Nom (ton) | 52 ns |
Alternate Parts for HGT1S20N60C3S
This table gives cross-reference parts and alternative options found for HGT1S20N60C3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S20N60C3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HGT1S12N60B3DS | 27A, 600V, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | HGT1S20N60C3S vs HGT1S12N60B3DS |
HGTG30N120CN | 30A, 1200V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | HGT1S20N60C3S vs HGTG30N120CN |
HGTG27N120BN | Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | Fairchild Semiconductor Corporation | HGT1S20N60C3S vs HGTG27N120BN |
IRG4IBC30KDPBF | Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PAK-3 | International Rectifier | HGT1S20N60C3S vs IRG4IBC30KDPBF |
SGP04N60 | Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Siemens | HGT1S20N60C3S vs SGP04N60 |
SKW30N60FKSA1 | Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | HGT1S20N60C3S vs SKW30N60FKSA1 |
IRG4PH30KPBF | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | HGT1S20N60C3S vs IRG4PH30KPBF |
IRG4PF50WDPBF | Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | HGT1S20N60C3S vs IRG4PF50WDPBF |
IRG4PSC71KPBF | Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, SUPER-247, 3 PIN | International Rectifier | HGT1S20N60C3S vs IRG4PSC71KPBF |
GT80J101 | TRANSISTOR 80 A, 600 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | HGT1S20N60C3S vs GT80J101 |