Datasheets
HF100-12 by:

RF Power Bipolar Transistor, 1-Element, Silicon, NPN, 0.500 INCH, FM-4

Part Details for HF100-12 by Advanced Semiconductor Inc

Overview of HF100-12 by Advanced Semiconductor Inc

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Part Details for HF100-12

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HF100-12 Part Data Attributes

HF100-12 Advanced Semiconductor Inc
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HF100-12 Advanced Semiconductor Inc RF Power Bipolar Transistor, 1-Element, Silicon, NPN, 0.500 INCH, FM-4
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description FLANGE MOUNT, O-CRFM-F4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection EMITTER
Collector Current-Max (IC) 20 A
Configuration SINGLE
DC Current Gain-Min (hFE) 10
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 290 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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