Datasheets
HER307GHA0G by: Taiwan Semiconductor

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,

Part Details for HER307GHA0G by Taiwan Semiconductor

Overview of HER307GHA0G by Taiwan Semiconductor

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for HER307GHA0G

Part # Distributor Description Stock Price Buy
DISTI # HER307GHA0G
Avnet Americas 75ns, 3A, 800V, High Efficient Recovery Rectifier - Tape and Reel (Alt: HER307GHA0G) RoHS: Compliant Min Qty: 3000 Package Multiple: 500 Container: Reel 0
  • 3,000 $0.1812
  • 4,000 $0.1761
  • 7,000 $0.1736
  • 15,000 $0.1711
  • 30,000 $0.1661
$0.1661 / $0.1812 Buy Now
DISTI # 821-HER307GHA0G
Mouser Electronics Rectifiers 75ns, 3A, 800V, High Efficient Recovery Rectifier RoHS: Compliant 0
  • 1 $0.5500
  • 10 $0.4740
  • 100 $0.3300
  • 500 $0.2570
  • 1,000 $0.2090
  • 2,500 $0.1870
  • 10,000 $0.1650
  • 25,000 $0.1610
  • 50,000 $0.1570
$0.1570 / $0.5500 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 500 Lead time: 12 Weeks 0
  • 3,000 $0.1936
$0.1936 Buy Now

Part Details for HER307GHA0G

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HER307GHA0G Part Data Attributes

HER307GHA0G Taiwan Semiconductor
Buy Now Datasheet
Compare Parts:
HER307GHA0G Taiwan Semiconductor Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Application EFFICIENCY
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.7 V
JEDEC-95 Code DO-201AD
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 125 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 3 A
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 800 V
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.075 µs
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 10

Alternate Parts for HER307GHA0G

This table gives cross-reference parts and alternative options found for HER307GHA0G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HER307GHA0G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HER307GR0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor HER307GHA0G vs HER307GR0G
HER307G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-27, HY Electronic Corp HER307GHA0G vs HER307G
HER307GA0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor HER307GHA0G vs HER307GA0
HER307G+ Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-27, SPC Multicomp HER307GHA0G vs HER307G+
HER307GHX0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor HER307GHA0G vs HER307GHX0
HER307GR0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor HER307GHA0G vs HER307GR0
HER307GB0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor HER307GHA0G vs HER307GB0G
HER307GHA0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor HER307GHA0G vs HER307GHA0
HER307G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Gulfsemi HER307GHA0G vs HER307G
HER307G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Suzhou Good-Ark Electronics Co Ltd HER307GHA0G vs HER307G
Part Number Description Manufacturer Compare
HER307GHA0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor HER307GHA0G vs HER307GHA0
1N5407GHR0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor HER307GHA0G vs 1N5407GHR0G
GP30KHE3TR Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN Fagor Electrónica HER307GHA0G vs GP30KHE3TR
1N5407GHB0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor HER307GHA0G vs 1N5407GHB0
FR306GX0 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor HER307GHA0G vs FR306GX0
FR306GU22 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Rectron Semiconductor HER307GHA0G vs FR306GU22
FR306GHX0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor HER307GHA0G vs FR306GHX0G
ER308_B0_00001 Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, HALOGEN FREE, HERMETIC SEALED, PLASTIC PACKAGE-2 PanJit Semiconductor HER307GHA0G vs ER308_B0_00001
HER307GX0G Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Taiwan Semiconductor HER307GHA0G vs HER307GX0G
EGP30K-BP Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 Micro Commercial Components HER307GHA0G vs EGP30K-BP

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