Datasheets
HB56S864ES-6B by: Hitachi Ltd

EDO DRAM Module, 8MX64, 60ns, MOS

Part Details for HB56S864ES-6B by Hitachi Ltd

Overview of HB56S864ES-6B by Hitachi Ltd

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Part Details for HB56S864ES-6B

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HB56S864ES-6B Part Data Attributes:

HB56S864ES-6B Hitachi Ltd
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HB56S864ES-6B Hitachi Ltd EDO DRAM Module, 8MX64, 60ns, MOS
Part Life Cycle Code Obsolete
Ihs Manufacturer HITACHI LTD
Package Description DIMM, DIMM168
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FAST PAGE WITH EDO
Access Time-Max 60 ns
Additional Feature RAS ONLY/CAS BEFORE RAS REFRESH
I/O Type COMMON
JESD-30 Code R-XDMA-N168
Memory Density 536870912 bit
Memory IC Type EDO DRAM MODULE
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 168
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM168
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 4096
Standby Current-Max 0.096 A
Supply Current-Max 1.744 mA
Supply Voltage-Max (Vsup) 5.25 V
Supply Voltage-Min (Vsup) 4.75 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology MOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL

Alternate Parts for HB56S864ES-6B

This table gives cross-reference parts and alternative options found for HB56S864ES-6B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HB56S864ES-6B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HB56S864ES-6 EDO DRAM Module, 8MX64, 60ns, CMOS, DIMM-168 Hitachi Ltd HB56S864ES-6B vs HB56S864ES-6
Part Number Description Manufacturer Compare
KMM366S823DTF-G0 Synchronous DRAM Module, 8MX64, 7ns, CMOS, DIMM-168 Samsung Semiconductor HB56S864ES-6B vs KMM366S823DTF-G0
MC-458CB646PFB-A80 Synchronous DRAM Module, 8MX64, 6ns, MOS, SOCKET TYPE, DIMM-168 Elpida Memory Inc HB56S864ES-6B vs MC-458CB646PFB-A80
KMM364C803CS-5 Fast Page DRAM Module, 8MX64, 50ns, CMOS Samsung Semiconductor HB56S864ES-6B vs KMM364C803CS-5
HB52E88EM-B6D Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168 Hitachi Ltd HB56S864ES-6B vs HB52E88EM-B6D
HYM71V8655HCT6-8 Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168 SK Hynix Inc HB56S864ES-6B vs HYM71V8655HCT6-8
M364C0883CJ0-C60 Fast Page DRAM Module, 8MX64, 60ns, CMOS, DIMM-168 Samsung Semiconductor HB56S864ES-6B vs M364C0883CJ0-C60
HYM72V16656BLT6-P Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-168 SK Hynix Inc HB56S864ES-6B vs HYM72V16656BLT6-P
HYM76V8635HGT8-K Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, DIMM-168 SK Hynix Inc HB56S864ES-6B vs HYM76V8635HGT8-K
HB56S864ESN-8B EDO DRAM Module, 8MX64, 80ns, MOS, DIMM-168 Hitachi Ltd HB56S864ES-6B vs HB56S864ESN-8B
HYM7V64830TFG-10 Synchronous DRAM Module, 8MX64, 8ns, CMOS, DIMM-168 SK Hynix Inc HB56S864ES-6B vs HYM7V64830TFG-10

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