Part Details for HB526C164EN-10 by Hitachi Ltd
Overview of HB526C164EN-10 by Hitachi Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HB526C164EN-10
HB526C164EN-10 CAD Models
HB526C164EN-10 Part Data Attributes
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HB526C164EN-10
Hitachi Ltd
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Datasheet
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HB526C164EN-10
Hitachi Ltd
Synchronous DRAM Module, 1MX64, 7.5ns, CMOS, DIMM-168
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HITACHI LTD | |
| Part Package Code | DIMM | |
| Package Description | DIMM, DIMM168 | |
| Pin Count | 168 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 7.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N168 | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 168 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 65 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM168 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.008 A | |
| Supply Current-Max | 0.6 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL |
Alternate Parts for HB526C164EN-10
This table gives cross-reference parts and alternative options found for HB526C164EN-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HB526C164EN-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MH1V64CWJ-7 | DRAM Module, 1MX64, 70ns, CMOS | Mitsubishi Electric | HB526C164EN-10 vs MH1V64CWJ-7 |
| HB56H164EJ-7 | EDO DRAM Module, 1MX64, 70ns, CMOS, DIMM-168 | Hitachi Ltd | HB526C164EN-10 vs HB56H164EJ-7 |
| MB8501E064AD-70DG | 1MX64 EDO DRAM MODULE, 70ns, PDMA168 | FUJITSU Semiconductor Limited | HB526C164EN-10 vs MB8501E064AD-70DG |
| MH1V64CWJ-6 | DRAM Module, 1MX64, 60ns, CMOS | Mitsubishi Electric | HB526C164EN-10 vs MH1V64CWJ-6 |
| CL001M01645LB0K-70 | EDO DRAM Module, 1MX64, 70ns, CMOS | Celestica Inc | HB526C164EN-10 vs CL001M01645LB0K-70 |
| 21129C | EDO DRAM Module, 1MX64, 60ns, CMOS | Celestica Inc | HB526C164EN-10 vs 21129C |
| CL001M01645LB0J-60 | EDO DRAM Module, 1MX64, 60ns, CMOS | Celestica Inc | HB526C164EN-10 vs CL001M01645LB0J-60 |
| HYM564124ATRG-80 | EDO DRAM Module, 1MX64, 80ns, CMOS, DIMM-168 | SK Hynix Inc | HB526C164EN-10 vs HYM564124ATRG-80 |
| KMM364E124AJ-7 | EDO DRAM Module, 1MX64, 70ns, CMOS, DIMM-168 | Samsung Semiconductor | HB526C164EN-10 vs KMM364E124AJ-7 |
| HB56H164EJ-6B | EDO DRAM Module, 1MX64, 60ns, MOS | Hitachi Ltd | HB526C164EN-10 vs HB56H164EJ-6B |