Part Details for HAT3010R by Hitachi Ltd
Overview of HAT3010R by Hitachi Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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HAT3010R-EL-E | Renesas Electronics Corporation | Nch/Pch Dual Power Mosfet 60V 6A 32Mohm Sop8 |
Part Details for HAT3010R
HAT3010R CAD Models
HAT3010R Part Data Attributes
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HAT3010R
Hitachi Ltd
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Datasheet
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HAT3010R
Hitachi Ltd
Power Field-Effect Transistor, 6A I(D), 60V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, FP-8DA, SOP-8
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HITACHI LTD | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.06 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 3 W | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for HAT3010R
This table gives cross-reference parts and alternative options found for HAT3010R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HAT3010R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF7343PBF | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | HAT3010R vs IRF7343PBF |
AUIRF7343QTR | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | International Rectifier | HAT3010R vs AUIRF7343QTR |
FDS4559 | 4.5A, 60V, 0.055ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SO-8, 8 PIN | Rochester Electronics LLC | HAT3010R vs FDS4559 |
HAT3018R | 6A, 60V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 | Renesas Electronics Corporation | HAT3010R vs HAT3018R |
HAT3008R | Power Field-Effect Transistor, 5A I(D), 60V, 0.084ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8 | Hitachi Ltd | HAT3010R vs HAT3008R |
HAT3010R | 6A, 60V, 0.045ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 | Renesas Electronics Corporation | HAT3010R vs HAT3010R |
FDS4559_F085 | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Fairchild Semiconductor Corporation | HAT3010R vs FDS4559_F085 |