Datasheets
HAT2116H-EL-E by: Renesas Electronics Corporation

Nch Single Power Mosfet 30V 30A 8.2Mohm Lfpak, LFPAK, /Embossed Tape

Part Details for HAT2116H-EL-E by Renesas Electronics Corporation

Overview of HAT2116H-EL-E by Renesas Electronics Corporation

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Available Datasheets

Part # Manufacturer Description Datasheet
HAT2116H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 30A 8.2Mohm Lfpak

Price & Stock for HAT2116H-EL-E

Part # Distributor Description Stock Price Buy
DISTI # HAT2116H-EL-E-ND
DigiKey MOSFET N-CH 30V 30A LFPAK Lead time: 36 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 30V, 0.0153OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 2277
  • 1 $2.1440
  • 606 $0.8844
  • 1,132 $0.8040
$0.8040 / $2.1440 Buy Now

Part Details for HAT2116H-EL-E

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HAT2116H-EL-E Part Data Attributes

HAT2116H-EL-E Renesas Electronics Corporation
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HAT2116H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 30A 8.2Mohm Lfpak, LFPAK, /Embossed Tape
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code LFPAK
Package Description SMALL OUTLINE, R-PSSO-G4
Pin Count 5
Manufacturer Package Code PTZZ0005DA
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Renesas Electronics
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.0153 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 15 W
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 20
Transistor Application SWITCHING
Transistor Element Material SILICON

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