There are no models available for this part yet.
Overview of HAT2029R-EL-E by Renesas Electronics Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for HAT2029R-EL-E by Renesas Electronics Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
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DISTI #
HAT2029R-EL-E
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Avnet Silica | Transistor MOSFET Array Dual N-CH 28V 8-Pin SOP T/R (Alt: HAT2029R-EL-E) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 28 Weeks, 0 Days | Silica - 2500 |
|
Buy Now |
CAD Models for HAT2029R-EL-E by Renesas Electronics Corporation
Part Data Attributes for HAT2029R-EL-E by Renesas Electronics Corporation
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|
|---|---|
|
Pbfree Code
|
Yes
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Rohs Code
|
Yes
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Part Life Cycle Code
|
Not Recommended
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Ihs Manufacturer
|
RENESAS ELECTRONICS CORP
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Part Package Code
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SOP
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Package Description
|
SMALL OUTLINE, R-PDSO-G8
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Pin Count
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8
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Manufacturer Package Code
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PRSP0008DD
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Reach Compliance Code
|
compliant
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ECCN Code
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EAR99
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Samacsys Manufacturer
|
Renesas Electronics
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Configuration
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SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
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|
DS Breakdown Voltage-Min
|
28 V
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Drain Current-Max (ID)
|
7.5 A
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Drain-source On Resistance-Max
|
0.043 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
|
R-PDSO-G8
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Moisture Sensitivity Level
|
1
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Number of Elements
|
2
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Number of Terminals
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8
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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260
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
|
3 W
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Pulsed Drain Current-Max (IDM)
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60 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
|
GULL WING
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Terminal Position
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DUAL
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Time@Peak Reflow Temperature-Max (s)
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20
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
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