Datasheets
HAT1023REL by:

Power Field-Effect Transistor, 7A I(D), 20V, 0.06ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for HAT1023REL by Hitachi Ltd

Overview of HAT1023REL by Hitachi Ltd

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Applications Education and Research Aerospace and Defense Entertainment and Gaming Communication and Networking

Available Datasheets

Part # Manufacturer Description Datasheet
HAT1023R-EL-E Renesas Electronics Corporation Pch Single Power Mosfet -20V -7A 40Mohm Sop8

Part Details for HAT1023REL

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HAT1023REL Part Data Attributes

HAT1023REL Hitachi Ltd
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HAT1023REL Hitachi Ltd Power Field-Effect Transistor, 7A I(D), 20V, 0.06ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Transferred
Ihs Manufacturer HITACHI LTD
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown
ECCN Code EAR99
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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