There are no models available for this part yet.
Overview of H5TQ2G83CFR-RDC by SK Hynix Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Computing and Data Storage
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| RTK0EMXDE0C00000BJ | Renesas Electronics Corporation | RX72M CPU Card with RDC-IC |
CAD Models for H5TQ2G83CFR-RDC by SK Hynix Inc
Part Data Attributes for H5TQ2G83CFR-RDC by SK Hynix Inc
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
SK HYNIX INC
|
|
Part Package Code
|
BGA
|
|
Package Description
|
HBGA, BGA78,9X13,32
|
|
Pin Count
|
78
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.36
|
|
Access Mode
|
MULTI BANK PAGE BURST
|
|
Access Time-Max
|
20 ns
|
|
Additional Feature
|
AUTO/SELF REFRESH
|
|
Clock Frequency-Max (fCLK)
|
933 MHz
|
|
I/O Type
|
COMMON
|
|
Interleaved Burst Length
|
4,8
|
|
JESD-30 Code
|
R-PBGA-B78
|
|
JESD-609 Code
|
e1
|
|
Length
|
11 mm
|
|
Memory Density
|
2147483648 bit
|
|
Memory IC Type
|
DDR3 DRAM
|
|
Memory Width
|
8
|
|
Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
78
|
|
Number of Words
|
268435456 words
|
|
Number of Words Code
|
256000000
|
|
Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
85 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
256MX8
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
HBGA
|
|
Package Equivalence Code
|
BGA78,9X13,32
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
GRID ARRAY, HEAT SINK/SLUG
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
8192
|
|
Seated Height-Max
|
1.2 mm
|
|
Self Refresh
|
YES
|
|
Sequential Burst Length
|
4,8
|
|
Supply Voltage-Max (Vsup)
|
1.575 V
|
|
Supply Voltage-Min (Vsup)
|
1.425 V
|
|
Supply Voltage-Nom (Vsup)
|
1.5 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
OTHER
|
|
Terminal Finish
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
|
Terminal Form
|
BALL
|
|
Terminal Pitch
|
0.8 mm
|
|
Terminal Position
|
BOTTOM
|
|
Time@Peak Reflow Temperature-Max (s)
|
20
|
|
Width
|
7.5 mm
|
Alternate Parts for H5TQ2G83CFR-RDC
This table gives cross-reference parts and alternative options found for H5TQ2G83CFR-RDC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H5TQ2G83CFR-RDC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| H5TQ2G83DFR-TEL | DDR DRAM, 256MX8, 0.18ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | SK Hynix Inc | H5TQ2G83CFR-RDC vs H5TQ2G83DFR-TEL |
| MT41K256M8-25 | DDR DRAM, 256MX8, 1.875ns, CMOS, PBGA78, 9 X 11.5 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | H5TQ2G83CFR-RDC vs MT41K256M8-25 |
| H5TQ2G83EFR-RDC | DDR DRAM, 256MX8, 0.195ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | SK Hynix Inc | H5TQ2G83CFR-RDC vs H5TQ2G83EFR-RDC |
| NT5CC256M8BN-AD | DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA78, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-78 | Nanya Technology Corporation | H5TQ2G83CFR-RDC vs NT5CC256M8BN-AD |
| K4B2G0846C-HYF8 | DDR DRAM, 256MX8, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | Samsung Semiconductor | H5TQ2G83CFR-RDC vs K4B2G0846C-HYF8 |
| K4B2G0846C-HYK00 | DDR DRAM, 256MX8, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | Samsung Semiconductor | H5TQ2G83CFR-RDC vs K4B2G0846C-HYK00 |
| H5TQ2G83DFR-PBC | DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | SK Hynix Inc | H5TQ2G83CFR-RDC vs H5TQ2G83DFR-PBC |
| H5TQ2G83EFR-PBC | DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | SK Hynix Inc | H5TQ2G83CFR-RDC vs H5TQ2G83EFR-PBC |
| NT5CC256M8BN-BE | DDR DRAM, 256MX8, 0.3ns, CMOS, PBGA78, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-78 | Nanya Technology Corporation | H5TQ2G83CFR-RDC vs NT5CC256M8BN-BE |
| H5TC2G83CFR-H9A | DDR DRAM, 256MX8, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | SK Hynix Inc | H5TQ2G83CFR-RDC vs H5TC2G83CFR-H9A |