Part Details for H5N2510DL-E by Renesas Electronics Corporation
Overview of H5N2510DL-E by Renesas Electronics Corporation
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Part Details for H5N2510DL-E
H5N2510DL-E CAD Models
H5N2510DL-E Part Data Attributes
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H5N2510DL-E
Renesas Electronics Corporation
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H5N2510DL-E
Renesas Electronics Corporation
Nch Single Power Mosfet 250V 5A 890Mohm DPAK(L)-(2)/To-251, DPAK(L)-(2), /Tube
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | DPAK(L)-(2) | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 4 | |
Manufacturer Package Code | PRSS0004ZD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Renesas Electronics | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.97 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e6 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN BISMUTH | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |