Part Details for H57V2562GFR-60C by SK Hynix Inc
Overview of H57V2562GFR-60C by SK Hynix Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Price & Stock for H57V2562GFR-60C
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O | 2000 |
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RFQ |
Part Details for H57V2562GFR-60C
H57V2562GFR-60C CAD Models
H57V2562GFR-60C Part Data Attributes
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H57V2562GFR-60C
SK Hynix Inc
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Datasheet
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H57V2562GFR-60C
SK Hynix Inc
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, FBGA-54
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | BGA | |
| Package Description | VFBGA, BGA54,9X9,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | S-PBGA-B54 | |
| JESD-609 Code | e1 | |
| Length | 8 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VFBGA | |
| Package Equivalence Code | BGA54,9X9,32 | |
| Package Shape | SQUARE | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.16 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 8 mm |
Alternate Parts for H57V2562GFR-60C
This table gives cross-reference parts and alternative options found for H57V2562GFR-60C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H57V2562GFR-60C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4S561632H-TC750 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | H57V2562GFR-60C vs K4S561632H-TC750 |
| V54C3256164VAT7PC | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | H57V2562GFR-60C vs V54C3256164VAT7PC |
| M2V56S40TP-6 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Mitsubishi Electric | H57V2562GFR-60C vs M2V56S40TP-6 |
| HY57V561620FT-6 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | H57V2562GFR-60C vs HY57V561620FT-6 |
| IS45S16160G-7TLA1 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54 | Integrated Silicon Solution Inc | H57V2562GFR-60C vs IS45S16160G-7TLA1 |
| IS45S16160J-6TLA1 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, TSOP2-54 | Integrated Silicon Solution Inc | H57V2562GFR-60C vs IS45S16160J-6TLA1 |
| MT48LC16M16A2B4-6AAAT | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54 | Micron Technology Inc | H57V2562GFR-60C vs MT48LC16M16A2B4-6AAAT |
| HY57V561620FLT-HI | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | H57V2562GFR-60C vs HY57V561620FLT-HI |
| M12L2561616A-6BG | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 13 MM, LEAD FREE, BGA-54 | Elite Semiconductor Memory Technology Inc | H57V2562GFR-60C vs M12L2561616A-6BG |
| HY57V561620FT-H | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | H57V2562GFR-60C vs HY57V561620FT-H |