Memory
GS8662TT10BD-450T
GSI Technology
Description: DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165

Overview of GS8662TT10BD-450T by GSI Technology

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
UPA2450TL-E1-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching
PGA450TPWRQ1 Texas Instruments Ultrasonic Sensor Signal Processor with Integrated Microcontroller (MCU) 28-TSSOP -40 to 125
REF3450TIDBVR Texas Instruments 5-V, low-drift, low-power, small-footprint series voltage reference 6-SOT-23 -40 to 125

CAD Models for GS8662TT10BD-450T by GSI Technology
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Part Data Attributes for GS8662TT10BD-450T by GSI Technology

GS8662TT10BD-450T
GSI Technology
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
GSI TECHNOLOGY
Part Package Code
BGA
Package Description
LBGA, BGA165,11X15,40
Pin Count
165
Reach Compliance Code
compliant
ECCN Code
3A991.B.2.A
HTS Code
8542.32.00.41
Access Time-Max
0.45 ns
Additional Feature
PIPELINED ARCHITECTURE, LATE WRITE
Clock Frequency-Max (fCLK)
450 MHz
I/O Type
COMMON
JESD-30 Code
R-PBGA-B165
JESD-609 Code
e0
Length
15 mm
Memory Density
75497472 bit
Memory IC Type
DDR SRAM
Memory Width
9
Number of Functions
1
Number of Terminals
165
Number of Words
8388608 words
Number of Words Code
8000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
8MX9
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
LBGA
Package Equivalence Code
BGA165,11X15,40
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE
Parallel/Serial
PARALLEL
Qualification Status
Not Qualified
Seated Height-Max
1.4 mm
Standby Current-Max
0.26 A
Standby Voltage-Min
1.7 V
Supply Current-Max
0.695 mA
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
BALL
Terminal Pitch
1 mm
Terminal Position
BOTTOM
Width
13 mm
Want to compare parts?
  1. GS8662TT10BD-450T
    GSI Technology
    DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
    VS

Alternate Parts for GS8662TT10BD-450T

This table gives cross-reference parts and alternative options found for GS8662TT10BD-450T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GS8662TT10BD-450T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
GS8662TT10BD-450IT DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology GS8662TT10BD-450T vs GS8662TT10BD-450IT
GS8662TT10BD-450I DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology GS8662TT10BD-450T vs GS8662TT10BD-450I
GS8662TT10BGD-450T DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662TT10BD-450T vs GS8662TT10BGD-450T
GS8662TT10BGD-450I DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662TT10BD-450T vs GS8662TT10BGD-450I
Part Number Description Manufacturer Compare
GS8662D10BGD-300 DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662TT10BD-450T vs GS8662D10BGD-300
GS8662T09BGD-400IT DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662TT10BD-450T vs GS8662T09BGD-400IT
GS8662R09BD-200 Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 GSI Technology GS8662TT10BD-450T vs GS8662R09BD-200
CY7C1526KV18-333BZXC QDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Infineon Technologies AG GS8662TT10BD-450T vs CY7C1526KV18-333BZXC
CY7C1529V18-278BZXC DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1.4 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor GS8662TT10BD-450T vs CY7C1529V18-278BZXC
GS8662D09GE-200T DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662TT10BD-450T vs GS8662D09GE-200T
GS8662T10BGD-333T DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662TT10BD-450T vs GS8662T10BGD-333T
GS8662TT10BD-300T DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology GS8662TT10BD-450T vs GS8662TT10BD-300T
CY7C1529V18-200BZXI DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1.4 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor GS8662TT10BD-450T vs CY7C1529V18-200BZXI
GS8662S09E-167 DDR SRAM, 8MX9, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 GSI Technology GS8662TT10BD-450T vs GS8662S09E-167

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