Part Details for GS8662S09E-250T by GSI Technology
Overview of GS8662S09E-250T by GSI Technology
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
2SJ625(0)-T1B-AT | Renesas Electronics Corporation | Power MOSFETs for Automotive | |
X9250TS24Z-2.7T1 | Renesas Electronics Corporation | Quad Digitally Controlled Potentiometer (XDCP™) |
Part Details for GS8662S09E-250T
GS8662S09E-250T CAD Models
GS8662S09E-250T Part Data Attributes
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GS8662S09E-250T
GSI Technology
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Datasheet
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GS8662S09E-250T
GSI Technology
DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | GSI TECHNOLOGY | |
Part Package Code | BGA | |
Package Description | LBGA, | |
Pin Count | 165 | |
Reach Compliance Code | unknown | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 0.45 ns | |
Additional Feature | PIPELINED ARCHITECTURE | |
JESD-30 Code | R-PBGA-B165 | |
Length | 17 mm | |
Memory Density | 75497472 bit | |
Memory IC Type | DDR SRAM | |
Memory Width | 9 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 8388608 words | |
Number of Words Code | 8000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 8MX9 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | 235 | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.5 mm | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Width | 15 mm |
Alternate Parts for GS8662S09E-250T
This table gives cross-reference parts and alternative options found for GS8662S09E-250T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GS8662S09E-250T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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GS8662S09E-250IT | DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 | GSI Technology | GS8662S09E-250T vs GS8662S09E-250IT |
UPD44644095F5-E40-FQ1-A | DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165 | NEC Electronics Group | GS8662S09E-250T vs UPD44644095F5-E40-FQ1-A |
GS8662S09GE-250IT | DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 | GSI Technology | GS8662S09E-250T vs GS8662S09GE-250IT |
GS8662S09GE-250 | DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 | GSI Technology | GS8662S09E-250T vs GS8662S09GE-250 |
CY7C1529V18-250BZC | DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | GS8662S09E-250T vs CY7C1529V18-250BZC |
UPD44644095F5-E40-FQ1 | DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165 | NEC Electronics Group | GS8662S09E-250T vs UPD44644095F5-E40-FQ1 |
CY7C1529V18-250BZXC | DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1.4 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | GS8662S09E-250T vs CY7C1529V18-250BZXC |