Datasheets
GS8662Q10BGD-250 by: GSI Technology

DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

Part Details for GS8662Q10BGD-250 by GSI Technology

Overview of GS8662Q10BGD-250 by GSI Technology

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Price & Stock for GS8662Q10BGD-250

Part # Distributor Description Stock Price Buy
DISTI # GS8662Q10BGD-250
Avnet Americas SRAM Chip Sync Dual 1.8V 72M-Bit 8M x 9-Bit 0.45ns 165-Pin FBGA Bulk - Trays (Alt: GS8662Q10BGD-250) RoHS: Compliant Min Qty: 144 Package Multiple: 144 Lead time: 24 Weeks, 0 Days Container: Tray 0
  • 144 $85.8330
  • 288 $84.2724
  • 576 $80.1108
  • 864 $78.0300
  • 1,152 $75.4290
$75.4290 / $85.8330 Buy Now
DISTI # 464-GS8662Q10BGD-250
Mouser Electronics SRAM 1.8 or 1.5V 8M x 9 72M RoHS: Compliant 0
  • 15 $81.5400
  • 30 $79.7400
  • 60 $78.0700
  • 105 $68.3400
$68.3400 / $81.5400 Order Now

Part Details for GS8662Q10BGD-250

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GS8662Q10BGD-250 Part Data Attributes

GS8662Q10BGD-250 GSI Technology
Buy Now Datasheet
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GS8662Q10BGD-250 GSI Technology DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer GSI TECHNOLOGY
Part Package Code BGA
Package Description LBGA, BGA165,11X15,40
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.B
HTS Code 8542.32.00.41
Factory Lead Time 24 Weeks
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165
JESD-609 Code e1
Length 15 mm
Memory Density 75497472 bit
Memory IC Type DDR SRAM
Memory Width 9
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX9
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.24 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.72 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 13 mm

Alternate Parts for GS8662Q10BGD-250

This table gives cross-reference parts and alternative options found for GS8662Q10BGD-250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GS8662Q10BGD-250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
GS8662Q10BD-250 DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology GS8662Q10BGD-250 vs GS8662Q10BD-250
Part Number Description Manufacturer Compare
CY7C1527AV18-167BZXC DDR SRAM, 8MX9, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor GS8662Q10BGD-250 vs CY7C1527AV18-167BZXC
CY7C1527V18-250BZI DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor GS8662Q10BGD-250 vs CY7C1527V18-250BZI
GS8662Q09BGD-167T Standard SRAM, 8MX9, 0.5ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662Q10BGD-250 vs GS8662Q09BGD-167T
GS8662T11BD-500 DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology GS8662Q10BGD-250 vs GS8662T11BD-500
CY7C1526JV18-167BZXI QDR SRAM, 8MX9, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor GS8662Q10BGD-250 vs CY7C1526JV18-167BZXI
GS8662Q09E-250I Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology GS8662Q10BGD-250 vs GS8662Q09E-250I
GS8662T09BGD-200 DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology GS8662Q10BGD-250 vs GS8662T09BGD-200
GS8662TT10BD-333 DDR SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology GS8662Q10BGD-250 vs GS8662TT10BD-333
GS8662D11BD-375IT Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 GSI Technology GS8662Q10BGD-250 vs GS8662D11BD-375IT
GS8662D11BD-333T Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 GSI Technology GS8662Q10BGD-250 vs GS8662D11BD-333T

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