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Transistors / RF Power Bipolar Transistors / GHZ20060
Datasheets
GHZ20060 by:

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 55SW, 2 PIN

Part Details for GHZ20060 by Advanced Power Technology

Overview of GHZ20060 by Advanced Power Technology

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Part Details for GHZ20060

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GHZ20060 Part Data Attributes

Parametric Data
GHZ20060 Advanced Power Technology
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GHZ20060 Advanced Power Technology RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 55SW, 2 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection EMITTER
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 25 V
Configuration SINGLE
DC Current Gain-Min (hFE) 20
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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