Part Details for GC1704-85 by Lockheed Martin Microwave
Overview of GC1704-85 by Lockheed Martin Microwave
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Part Details for GC1704-85
GC1704-85 CAD Models
GC1704-85 Part Data Attributes
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GC1704-85
Lockheed Martin Microwave
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GC1704-85
Lockheed Martin Microwave
Variable Capacitance Diode, S Band, 1.8pF C(T), 60V, Silicon, Abrupt
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | LOCKHEED MARTIN MICROWAVE | |
Package Description | O-MEMW-N2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Breakdown Voltage-Min | 60 V | |
Case Connection | CATHODE | |
Configuration | SINGLE | |
Diode Cap Tolerance | 10% | |
Diode Capacitance Ratio-Min | 5.5 | |
Diode Capacitance-Nom | 1.8 pF | |
Diode Element Material | SILICON | |
Diode Type | VARIABLE CAPACITANCE DIODE | |
Frequency Band | S BAND | |
JESD-30 Code | O-MEMW-N2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | MICROWAVE | |
Qualification Status | Not Qualified | |
Quality Factor-Min | 1700 | |
Reverse Current-Max | 0.02 µA | |
Reverse Test Voltage | 55 V | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | END | |
Variable Capacitance Diode Classification | ABRUPT |