Datasheets
FSS13A0R3 by:

Power Field-Effect Transistor, 12A I(D), 100V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

Part Details for FSS13A0R3 by Fairchild Semiconductor Corporation

Overview of FSS13A0R3 by Fairchild Semiconductor Corporation

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Applications Telecommunications Communication and Networking

Part Details for FSS13A0R3

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FSS13A0R3 Part Data Attributes

FSS13A0R3 Fairchild Semiconductor Corporation
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FSS13A0R3 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 12A I(D), 100V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.17 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-257AA
JESD-30 Code R-MSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 22 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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