Part Details for FS7VS-5 by Mitsubishi Electric
Overview of FS7VS-5 by Mitsubishi Electric
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FS7VS-5
FS7VS-5 CAD Models
FS7VS-5 Part Data Attributes
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FS7VS-5
Mitsubishi Electric
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Datasheet
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FS7VS-5
Mitsubishi Electric
Power Field-Effect Transistor, 7A I(D), 250V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 21 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FS7VS-5
This table gives cross-reference parts and alternative options found for FS7VS-5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FS7VS-5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF620STRLPBF | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | FS7VS-5 vs IRF620STRLPBF |
| IRF620SPBF | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | International Rectifier | FS7VS-5 vs IRF620SPBF |
| IRF620STRR | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | FS7VS-5 vs IRF620STRR |
| SIHF620S-GE3 | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | FS7VS-5 vs SIHF620S-GE3 |
| SIHF620S-GE3 | TRANSISTOR 5.2 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | FS7VS-5 vs SIHF620S-GE3 |
| IRF620S | 5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | FS7VS-5 vs IRF620S |
| IRF620SPBF | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | FS7VS-5 vs IRF620SPBF |
| IRFW620A | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Samsung Semiconductor | FS7VS-5 vs IRFW620A |
| FS7VS-5 | 7A, 250V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S, 3 PIN | Renesas Electronics Corporation | FS7VS-5 vs FS7VS-5 |