Part Details for FS660R08A6P2FB by Infineon Technologies AG
Overview of FS660R08A6P2FB by Infineon Technologies AG
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for FS660R08A6P2FB
FS660R08A6P2FB CAD Models
FS660R08A6P2FB Part Data Attributes
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FS660R08A6P2FB
Infineon Technologies AG
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Datasheet
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FS660R08A6P2FB
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 660 A | |
Collector-Emitter Voltage-Max | 750 V | |
Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X33 | |
Number of Elements | 6 | |
Number of Terminals | 33 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1053 W | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 1110 ns | |
Turn-on Time-Nom (ton) | 380 ns | |
VCEsat-Max | 1.35 V |