Part Details for FS5VS-5 by Renesas Electronics Corporation
Overview of FS5VS-5 by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for FS5VS-5
FS5VS-5 CAD Models
FS5VS-5 Part Data Attributes
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FS5VS-5
Renesas Electronics Corporation
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Datasheet
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FS5VS-5
Renesas Electronics Corporation
5A, 250V, 1.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S, 3 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | TO-220S | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 1.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FS5VS-5
This table gives cross-reference parts and alternative options found for FS5VS-5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FS5VS-5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRLR210ATF | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | FS5VS-5 vs IRLR210ATF |
| IRFR2229A | Intersil Corporation | Check for Price | 3.8A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | FS5VS-5 vs IRFR2229A |
| PHD9NQ20T,118 | Nexperia | Check for Price | N-channel TrenchMOS standard level FET@en-us DPAK 3-Pin | FS5VS-5 vs PHD9NQ20T,118 |
| FQU5N20TU | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | FS5VS-5 vs FQU5N20TU |
| IRFR221 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | FS5VS-5 vs IRFR221 |
| BUK464-200A | NXP Semiconductors | Check for Price | TRANSISTOR 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | FS5VS-5 vs BUK464-200A |
| IRLR210A | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | FS5VS-5 vs IRLR210A |
| FQD4N20TM | onsemi | $0.3581 | N-Channel QFET® MOSFET 200V, 3A, 1.4Ω, DPAK-3 / TO-252-3, 2500-REEL | FS5VS-5 vs FQD4N20TM |
| IRFR212 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FS5VS-5 vs IRFR212 |
| IRFR220B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | FS5VS-5 vs IRFR220B |