Datasheets
FS15R12VT3 by:

Insulated Gate Bipolar Transistor, 24A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

Part Details for FS15R12VT3 by Infineon Technologies AG

Overview of FS15R12VT3 by Infineon Technologies AG

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Price & Stock for FS15R12VT3

Part # Distributor Description Stock Price Buy
DISTI # FS15R12VT3
TME Module: IGBT, transistor/transistor, IGBT three-phase bridge Min Qty: 1 0
  • 1 $24.9000
  • 3 $22.4200
  • 6 $19.8400
  • 10 $17.7900
$17.7900 / $24.9000 RFQ

Part Details for FS15R12VT3

FS15R12VT3 CAD Models

FS15R12VT3 Part Data Attributes

FS15R12VT3 Infineon Technologies AG
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FS15R12VT3 Infineon Technologies AG Insulated Gate Bipolar Transistor, 24A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X11
Pin Count 11
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 24 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X11
Number of Elements 6
Number of Terminals 11
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 86 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 590 ns
Turn-on Time-Nom (ton) 72 ns
VCEsat-Max 2.15 V

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