Datasheets
FS100R12KT4G_B11 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

Part Details for FS100R12KT4G_B11 by Infineon Technologies AG

Overview of FS100R12KT4G_B11 by Infineon Technologies AG

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Price & Stock for FS100R12KT4G_B11

Part # Distributor Description Stock Price Buy
DISTI # 641-FS100R12KT4G_B11
Mouser Electronics IGBT Modules N-CH 1.2KV 100A RoHS: Compliant 0
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Part Details for FS100R12KT4G_B11

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FS100R12KT4G_B11 Part Data Attributes

FS100R12KT4G_B11 Infineon Technologies AG
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FS100R12KT4G_B11 Infineon Technologies AG Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X35
Pin Count 35
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X35
Number of Elements 6
Number of Terminals 35
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 515 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 570 ns
Turn-on Time-Nom (ton) 165 ns
VCEsat-Max 2.2 V

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