Datasheets
FQU20N06LTU by:

17.2A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3

Part Details for FQU20N06LTU by Rochester Electronics LLC

Overview of FQU20N06LTU by Rochester Electronics LLC

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Part Details for FQU20N06LTU

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FQU20N06LTU Part Data Attributes

FQU20N06LTU Rochester Electronics LLC
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FQU20N06LTU Rochester Electronics LLC 17.2A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-251
Package Description IPAK-3
Pin Count 3
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 170 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 17.2 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 68.8 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQU20N06LTU

This table gives cross-reference parts and alternative options found for FQU20N06LTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU20N06LTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQU20N06LTU Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 17.2 A, 42 mΩ, IPAK, 5040-TUBE onsemi FQU20N06LTU vs FQU20N06LTU
Part Number Description Manufacturer Compare
SSP7N60A Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor FQU20N06LTU vs SSP7N60A
FQPF34N20 17.5A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN Rochester Electronics LLC FQU20N06LTU vs FQPF34N20
IRF654B 21A, 250V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC FQU20N06LTU vs IRF654B
FQPF3N40 1.6A, 400V, 3.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN Rochester Electronics LLC FQU20N06LTU vs FQPF3N40
FQA24N50 24A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN Rochester Electronics LLC FQU20N06LTU vs FQA24N50
SSH7N90A Power Field-Effect Transistor, 7A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor FQU20N06LTU vs SSH7N90A
FQA24N50F 24A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN Rochester Electronics LLC FQU20N06LTU vs FQA24N50F
SSS5N90A Power Field-Effect Transistor, 3A I(D), 900V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN Samsung Semiconductor FQU20N06LTU vs SSS5N90A
FDP6035L 58A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC FQU20N06LTU vs FDP6035L
FQAF8N80 5.9A, 800V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN Rochester Electronics LLC FQU20N06LTU vs FQAF8N80

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