Part Details for FQT1N60CTF_WS by Fairchild Semiconductor Corporation
Overview of FQT1N60CTF_WS by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FQT1N60CTF_WS
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 200MA, 600V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET | 96 |
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$0.5400 / $0.9000 | Buy Now |
Part Details for FQT1N60CTF_WS
FQT1N60CTF_WS CAD Models
FQT1N60CTF_WS Part Data Attributes
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FQT1N60CTF_WS
Fairchild Semiconductor Corporation
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Datasheet
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FQT1N60CTF_WS
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 0.2A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOT-223 | |
| Package Description | ROHS COMPLIANT PACKAGE-4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | MOLDED PACKAGE, SOT-223, 4 LEAD | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 11.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |