Part Details for FQT13N06 by onsemi
Overview of FQT13N06 by onsemi
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for FQT13N06
FQT13N06 CAD Models
FQT13N06 Part Data Attributes
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FQT13N06
onsemi
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Datasheet
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FQT13N06
onsemi
Power Field-Effect Transistor
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | SOT-223, 4 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 85 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 2.8 A | |
Drain-source On Resistance-Max | 0.14 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 20 pF | |
JESD-30 Code | R-PDSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.1 W | |
Pulsed Drain Current-Max (IDM) | 11.2 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 65 ns | |
Turn-on Time-Max (ton) | 80 ns |