Part Details for FQPF6N80T by onsemi
Overview of FQPF6N80T by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FQPF6N80T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
50H4313
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Newark | N-Ch/800V/6A/Qfet Rohs Compliant: Yes |Onsemi FQPF6N80T RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.0800 / $1.3800 | Buy Now |
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DISTI #
FQPF6N80T
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Avnet Americas | Trans MOSFET N-CH 800V 3.3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF6N80T) RoHS: Compliant Min Qty: 667 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 5000 Partner Stock |
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$0.8156 | Buy Now |
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DISTI #
FQPF6N80T
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Avnet Americas | Trans MOSFET N-CH 800V 3.3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF6N80T) RoHS: Compliant Min Qty: 288 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 3715 Partner Stock |
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$1.0768 / $1.2852 | Buy Now |
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DISTI #
FQPF6N80T
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TME | Transistor: N-MOSFET, unipolar, 800V, 2.1A, Idm: 13.2A, 51W, TO220FP Min Qty: 1 | 0 |
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$1.4700 / $2.1900 | RFQ |
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Flip Electronics | Stock, ship today | 5000 |
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RFQ |
Part Details for FQPF6N80T
FQPF6N80T CAD Models
FQPF6N80T Part Data Attributes
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FQPF6N80T
onsemi
Buy Now
Datasheet
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Compare Parts:
FQPF6N80T
onsemi
Power MOSFET, N-Channel, QFET®, 800 V, 3.3 A, 1.95 Ω, TO-220F, 1000-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-220FP, 3 PIN | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 680 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 3.3 A | |
| Drain-source On Resistance-Max | 1.95 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 51 W | |
| Pulsed Drain Current-Max (IDM) | 13.2 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |