Part Details for FQP17N08L by Rochester Electronics LLC
Overview of FQP17N08L by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FQP17N08L
FQP17N08L CAD Models
FQP17N08L Part Data Attributes
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FQP17N08L
Rochester Electronics LLC
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Datasheet
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FQP17N08L
Rochester Electronics LLC
16.5A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 16.5 A | |
Drain-source On Resistance-Max | 0.115 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | NOT APPLICABLE | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 66 A | |
Qualification Status | COMMERCIAL | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQP17N08L
This table gives cross-reference parts and alternative options found for FQP17N08L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP17N08L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HUF75617D3ST | 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | FQP17N08L vs HUF75617D3ST |
FQPF4N80 | 2.2A, 800V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN | Rochester Electronics LLC | FQP17N08L vs FQPF4N80 |
SPB02N60S5 | 1.8A, 600V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Rochester Electronics LLC | FQP17N08L vs SPB02N60S5 |
SSH10N90A | Power Field-Effect Transistor, 10A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | FQP17N08L vs SSH10N90A |
HUF75617D3S | 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | FQP17N08L vs HUF75617D3S |
IPP09N03LA | 50A, 25V, 0.0155ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | Rochester Electronics LLC | FQP17N08L vs IPP09N03LA |
IRF449 | Power Field-Effect Transistor, 8.6A I(D), 500V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | FQP17N08L vs IRF449 |
IRFIP440 | Power Field-Effect Transistor, 6.4A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | International Rectifier | FQP17N08L vs IRFIP440 |
SSP6N90A | Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | FQP17N08L vs SSP6N90A |
SPU08P06P | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | FQP17N08L vs SPU08P06P |