Datasheets
FQI6N50TU by:

5.5A, 500V, 1.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

Part Details for FQI6N50TU by Rochester Electronics LLC

Overview of FQI6N50TU by Rochester Electronics LLC

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Part Details for FQI6N50TU

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FQI6N50TU Part Data Attributes

FQI6N50TU Rochester Electronics LLC
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FQI6N50TU Rochester Electronics LLC 5.5A, 500V, 1.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-262AA
Package Description I2PAK-3
Pin Count 3
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 340 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 1.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQI6N50TU

This table gives cross-reference parts and alternative options found for FQI6N50TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQI6N50TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTD4857NT4G 12A, 25V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3 Rochester Electronics LLC FQI6N50TU vs NTD4857NT4G
2SJ660 Power Field-Effect Transistor, 26A I(D), 60V, 0.094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN SANYO Electric Co Ltd FQI6N50TU vs 2SJ660
IRF450 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier FQI6N50TU vs IRF450
IRF740R 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC FQI6N50TU vs IRF740R
SSF7N80A Power Field-Effect Transistor, 5A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN Samsung Semiconductor FQI6N50TU vs SSF7N80A
IRF1405ZS Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier FQI6N50TU vs IRF1405ZS
FQP9N50 9A, 500V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC FQI6N50TU vs FQP9N50
FDB8878 48A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT PACKAGE-3 Rochester Electronics LLC FQI6N50TU vs FDB8878
FQA7N80 7.2A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN Rochester Electronics LLC FQI6N50TU vs FQA7N80
SPP08P06P 8.8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Rochester Electronics LLC FQI6N50TU vs SPP08P06P

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