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Part Details for FQD5P10TM by onsemi
Overview of FQD5P10TM by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Internet of Things (IoT)
Environmental Monitoring
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
Price & Stock for FQD5P10TM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
82C4069
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Newark | Mosfet Transistor, P Channel, -3.6 A, -100 V, 0.82 Ohm, -10 V, -2 V Rohs Compliant: Yes |Onsemi FQD5P10TM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3140 | Buy Now |
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DISTI #
84W8882
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Newark | Mosfet, P Channel, -100V, 0.82Ohm, -3.6A, To-252-3, Transistor Polarity:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:3.6A, On Resistance Rds(On):0.82Ohm, Transistor Mounting:Surface Mount, No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi FQD5P10TM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.4230 | Buy Now |
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DISTI #
95W3215
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Newark | Mosfet Transistor, P Channel, -3.6 A, -100 V, 0.82 Ohm, -10 V, -2 V Rohs Compliant: Yes |Onsemi FQD5P10TM Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
FQD5P10TMFSCT-ND
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DigiKey | MOSFET P-CH 100V 3.6A DPAK Min Qty: 1 Lead time: 99 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
19922 In Stock |
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$0.3010 / $0.9100 | Buy Now |
|
DISTI #
FQD5P10TM
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TME | Transistor: P-MOSFET, unipolar, -100V, -2.28A, Idm: -14.4A, 25W Min Qty: 1 | 0 |
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$0.4240 / $1.1850 | RFQ |
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LCSC | 100V 3.6A 1.051.8A10V 4V250uA 1PCSPChannel TO-252(DPAK) MOSFETs ROHS | 20 |
|
$0.3674 / $0.5762 | Buy Now |
Part Details for FQD5P10TM
FQD5P10TM CAD Models
FQD5P10TM Part Data Attributes:
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FQD5P10TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD5P10TM
onsemi
Power MOSFET, P-Channel, QFET®, -100 V, -3.6 A, 1.05 Ω, DPAK, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 24 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 55 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 3.6 A | |
| Drain-source On Resistance-Max | 1.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 14.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD5P10TM
This table gives cross-reference parts and alternative options found for FQD5P10TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD5P10TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD5P10 | Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD5P10TM vs FQD5P10 |
| FQD5P10TM | 3.6A, 100V, 1.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FQD5P10TM vs FQD5P10TM |
| FQD5P10TF | Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD5P10TM vs FQD5P10TF |
| FQD5P10TF | 3.6A, 100V, 1.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FQD5P10TM vs FQD5P10TF |
| FQD5P10TM | Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD5P10TM vs FQD5P10TM |