Transistors
FQD5N20TF
Fairchild Semiconductor Corporation
Description: Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

Overview of FQD5N20TF by Fairchild Semiconductor Corporation

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Where used in Applications: Space Technology Internet of Things (IoT) Environmental Monitoring Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Education and Research Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

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Part Data Attributes for FQD5N20TF by Fairchild Semiconductor Corporation

FQD5N20TF
Fairchild Semiconductor Corporation
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-252
Package Description
DPAK-3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
60 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
3.8 A
Drain-source On Resistance-Max
1.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
37 W
Pulsed Drain Current-Max (IDM)
15.2 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. FQD5N20TF
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
    VS

Alternate Parts for FQD5N20TF

This table gives cross-reference parts and alternative options found for FQD5N20TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD5N20TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FQD5N20 Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD5N20TF vs FQD5N20
Part Number Description Manufacturer Compare
IRFR210B Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Fairchild Semiconductor Corporation FQD5N20TF vs IRFR210B
FS5VS-5 Power Field-Effect Transistor, 5A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Powerex Power Semiconductors FQD5N20TF vs FS5VS-5
2SK1931 Power Field-Effect Transistor, 5A I(D), 200V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EPACK-3 Shindengen Electronic Manufacturing Co Ltd FQD5N20TF vs 2SK1931
FQD4N20TM N-Channel QFET® MOSFET 200V, 3A, 1.4Ω, 2500-REEL onsemi FQD5N20TF vs FQD4N20TM
IRLR210A Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD5N20TF vs IRLR210A
IRLR230A Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor FQD5N20TF vs IRLR230A
IRLR210A Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor FQD5N20TF vs IRLR210A
2SK1335(S)TR Power Field-Effect Transistor, 3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd FQD5N20TF vs 2SK1335(S)TR
IRFR2229A 3.8A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation FQD5N20TF vs IRFR2229A
H5N2004DS Power Field-Effect Transistor, 8A I(D), 200V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Hitachi Ltd FQD5N20TF vs H5N2004DS

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