FDD10N20LZTM
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Power MOSFET, N-Channel, Logic Level, UniFETTM, 200 V, 7.6 A, 360 mΩ, DPAK, 2500-REEL
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onsemi
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FQD12N20LTM-F085 vs FDD10N20LZTM
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FQD10N20LTF
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Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Fairchild Semiconductor Corporation
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FQD12N20LTM-F085 vs FQD10N20LTF
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FQD12N20L
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Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Fairchild Semiconductor Corporation
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FQD12N20LTM-F085 vs FQD12N20L
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FQD10N20LTM
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Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK, 2500-REEL
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onsemi
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FQD12N20LTM-F085 vs FQD10N20LTM
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FQD12N20
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Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Fairchild Semiconductor Corporation
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FQD12N20LTM-F085 vs FQD12N20
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FQD12N20LTM_NL
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Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3
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Fairchild Semiconductor Corporation
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FQD12N20LTM-F085 vs FQD12N20LTM_NL
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FQD12N20TF
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Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Fairchild Semiconductor Corporation
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FQD12N20LTM-F085 vs FQD12N20TF
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FQD12N20LTF
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Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Fairchild Semiconductor Corporation
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FQD12N20LTM-F085 vs FQD12N20LTF
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FQD12N20TM
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Power MOSFET, N-Channel, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL
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onsemi
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FQD12N20LTM-F085 vs FQD12N20TM
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