Part Details for FQA13N50C_F109 by Fairchild Semiconductor Corporation
Overview of FQA13N50C_F109 by Fairchild Semiconductor Corporation
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
R5F109AAKSP#V0G | Renesas Electronics Corporation | Microcontrollers with Low Consumption Current for Automotive Applications | |
R5F10968JSP#X0 | Renesas Electronics Corporation | Microcontrollers with Low Consumption Current for Automotive Applications | |
R5F1096AKSP#H0 | Renesas Electronics Corporation | Microcontrollers with Low Consumption Current for Automotive Applications |
Part Details for FQA13N50C_F109
FQA13N50C_F109 CAD Models
FQA13N50C_F109 Part Data Attributes
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FQA13N50C_F109
Fairchild Semiconductor Corporation
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FQA13N50C_F109
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 13.5A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-65, TO-3PN, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-3PN | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Manufacturer Package Code | 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 860 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 13.5 A | |
Drain-source On Resistance-Max | 0.48 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 218 W | |
Pulsed Drain Current-Max (IDM) | 54 A | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |