Part Details for FPD7612-000S3 by RF Micro Devices Inc
Overview of FPD7612-000S3 by RF Micro Devices Inc
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Part Details for FPD7612-000S3
FPD7612-000S3 CAD Models
FPD7612-000S3 Part Data Attributes
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FPD7612-000S3
RF Micro Devices Inc
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Datasheet
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FPD7612-000S3
RF Micro Devices Inc
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, DIE-5
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RF MICRO DEVICES INC | |
| Part Package Code | DIE | |
| Package Description | UNCASED CHIP, R-XUUC-N5 | |
| Pin Count | 5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 5A991.G | |
| HTS Code | 8542.33.00.01 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 8 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | X BAND | |
| JESD-30 Code | R-XUUC-N5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.5 W | |
| Power Gain-Min (Gp) | 11 dB | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |