Part Details for FPD750DFN by RF Micro Devices Inc
Overview of FPD750DFN by RF Micro Devices Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for FPD750DFN
FPD750DFN CAD Models
FPD750DFN Part Data Attributes
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FPD750DFN
RF Micro Devices Inc
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Datasheet
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FPD750DFN
RF Micro Devices Inc
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 2 X 2 MM, ROHS COMPLIANT, DFN-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RF MICRO DEVICES INC | |
| Part Package Code | DFN | |
| Package Description | SMALL OUTLINE, S-PDSO-N6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 8 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | S-PDSO-N6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for FPD750DFN
This table gives cross-reference parts and alternative options found for FPD750DFN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FPD750DFN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FPD750SOT343CE | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC PACKAGE-4 | RF Micro Devices Inc | FPD750DFN vs FPD750SOT343CE |
| FPD750SOT343E | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC PACKAGE-4 | Qorvo | FPD750DFN vs FPD750SOT343E |
| FPD750SOT89 | RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN | RF Micro Devices Inc | FPD750DFN vs FPD750SOT89 |
| FPD750SOT343E | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC PACKAGE-4 | RF Micro Devices Inc | FPD750DFN vs FPD750SOT343E |
| FPD750SOT343CE | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC PACKAGE-4 | Qorvo | FPD750DFN vs FPD750SOT343CE |
| FPD750SOT343 | RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-343, 4 PIN | Qorvo | FPD750DFN vs FPD750SOT343 |